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PD - 91508D
IRLMS1503
HEXFET ? Power MOSFET
l
l
l
l
Generation V Technology
Micro6 Package Style
Ultra Low R DS(on)
N-Channel MOSFET
D
D
1
2
6
5
A
D
D
V DSS = 30V
Description
Fifth Generation HEXFET ? power MOSFETs from
G
3
Top View
4
S
R DS(on) = 0.10 ?
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET ? power MOSFETs are well known for,
provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications.
The Micro6 ? package with its customized leadframe
produces a HEXFET ? power MOSFET with R DS(on)
60% less than a similar size SOT-23. This package is
ideal for applications where printed circuit board space
is at a premium. It's unique thermal design and R DS(on)
reduction enables a current-handling increase of
nearly 300% compared to the SOT-23.
Absolute Maximum Ratings
Micro6 ?
Parameter
Max.
Units
I D @ T A = 25°C
Continuous Drain Current, V GS @ 10V
3.2
I D @ T A = 70°C
I DM
P D @T A = 25°C
V GS
dv/dt
T J, T STG
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ?
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ?
Junction and Storage Temperature Range
2.6
18
1.7
13
± 20
5.0
-55 to + 150
A
W
mW/°C
V
V/ns
°C
Thermal Resistance Ratings
R θ JA
Parameter
Maximum Junction-to-Ambient ?
Min.
???
Typ.
???
Max
75
Units
°C/W
www.irf.com
1
3/17/04
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